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 CS684 TO3
PNP SILICON DARLINGTON POWER TRANSISTORS
PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-3 metal package. Compliance to RoHS.
CS684 is the BD684 in TO3 package.
ABSOLUTE MAXIMUM RATINGS
Symbol
-VCEO -VCBO
-VEBO Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature
Ratings
Value
140 140 5 -IC -ICM -IBM
@ Tmb = 25C 4 6 0.1
Unit
V V V A A Watts C C
-IC -IB PT TJ TStg
65 150 -65 to +150
THERMAL CHARACTERISTICS Symbol
RthJ-mb RthJ-a
Ratings
Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air
Value
3.12 100
Unit
K/W K/W
COMSET SEMICONDUCTORS
1
CS684 TO3
ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted
Symbol
-ICBO -ICEO -IEBO -VCE(SAT) hFE -VBE hfe fhfe VF
Ratings
Collector cut-off current Collector cut-off current Emitter cut-offcurrent Collector-Emitter saturation Voltage DC Current Gain
Test Condition(s)
IE=0 , -VCB= -VCEOMAX=140 V IE=0 , -VCB= -1/2VCBOMAX= 70V,Tj= 150C IB=0 , -VCE= -1/2VCEOMAX=70 V IC=0, -VEB=5 V -IC=1.5 A, -IB=6 mA -VCE=3 V, -IC=500 mA -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=4 A -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=1,5 A, f= 1 MHz -VCE=3 V, -IC=1,5 A IF=1,5 A -VCE=50 V, tP= 20ms,non rep., without heatsink
Min Typ
750 10 0,8 2000 750 60 1,5 0,8 4,5
Mx Unit
0,2 1 0,2 5 2 2,5 2 8 mA mA mA V
Base-Emitter Voltage(1&2) Small signal current gain Ut-off frequency Diode forward voltage Second-breakdown -I(SB) collector current Turn-on time ton -Icon= 1,5A, Ibon= -Iboff= 6mA, VCC=30V Turn-off time toff 1. Measured under pulse conditions :tP <300s, <2%. 2. VBE decreases by about 3,6 mV/K with increasing temperature.
V kHz V A s
MECHANICAL DATA CASE TO-3
DIMENSIONS
A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector
COMSET SEMICONDUCTORS
2


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